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Monday, August 3, 2020 | History

1 edition of Optical Properties of Narrow-Gap Low-Dimensional Structures found in the catalog.

Optical Properties of Narrow-Gap Low-Dimensional Structures

by C. M. Sotomayor Torres

  • 316 Want to read
  • 1 Currently reading

Published by Springer US in Boston, MA .
Written in English

    Subjects:
  • Mechanics,
  • Physics

  • Edition Notes

    Statementedited by C.M. Sotomayor Torres, J.C. Portal, J.C. Maan, R.A. Stradling
    SeriesNATO ASI Series, Series B: Physics, 0258-1221 -- 152, NATO ASI series -- 152.
    ContributionsPortal, J. C., Maan, J. C., Stradling, R. A.
    Classifications
    LC ClassificationsQC120-168.85
    The Physical Object
    Format[electronic resource] /
    Pagination1 online resource (372 pages).
    Number of Pages372
    ID Numbers
    Open LibraryOL27078898M
    ISBN 101461318793
    ISBN 109781461318798
    OCLC/WorldCa840281486

    Multiple quantum well structure is the subject of theoretical and experimental research over the last two decades due to the possibility of making novel electronic and optoelectronic devices. The phenomenon of resonant tunneling makes it a prime candidate for all tunneling-based quantum devices with one-dimensional confinement. THz laser design using multilayered low-dimensional semiconductor Author: Arpan Deyasi. Static, dynamic, and noise properties of the Schottky photodiode, the field‐effect transistor, and the integrated circuit have been investigated and are reported. As an example, dynamic responsivity up to 50 A/W can be achieved at ‐μm wavelength for the integrated by:

    The book gives a comprehensive review of the present state-of-the-art in ZnO R+D, including growth, doping, lattice dynamics, electric magnetic and optical properties. The emphasis is on the electric and optical properties, because this is the area where novel applications may be . Magneto-Optical Properties of Narrow-Gap Semiconductor Heterostructures Creator: In order to understand or predict how those devices work one need to understand the spin-dependent electronic structures of both bulk and low-dimensional semiconductors. We use the envelope function approximation for the electronic and magneto-optical.

    Readers will find: a review of surface roughness as it relates to desired optical properties; characterization of optical materials used for III-V semiconductor systems, group IV materials, and amorphous and microcrystalline semiconductors; coverage of on the stability and modification of film and surface optical properties, including optical. Moreover, low-dimensional broadband A II B VI and A IV B VI semiconductors with an exciton diameter of several nanometers (e.g. exciton diameter of CdS is nm) are of interest both for the quantum-size effects studies and possible application in light emitters, sensors, solar cells etc. (Cao et al., ).Cited by:


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Optical Properties of Narrow-Gap Low-Dimensional Structures by C. M. Sotomayor Torres Download PDF EPUB FB2

This volume contains the Proceedings of the NATO Advanced Research Workshop on "Optical Properties of Narrow-Gap Low-Dimensional Structures", held from July 29th to August 1st,in St. Andrews, Scotland, under the auspices of the NATO International Scientific Exchange : Paperback.

This volume contains the Proceedings of the NATO Advanced Research Workshop on "Optical Properties of Narrow-Gap Low-Dimensional Structures", held from July 29th to August 1st,in St.

Andrews, Scotland, under the auspices of the NATO International Scientific Exchange Program. This volume contains the Proceedings of the NATO Advanced Research Workshop on "Optical Properties of Narrow-Gap Low-Dimensional Structures", held from Optical Properties of Narrow-Gap Low-Dimensional Structures book 29th to August 1st,in St.

Andrews, Scotland, under the auspices of the NATO International Scientific Exchange Program. The workshop wasBrand: Springer US. NATO Advanced Research Workshop on Optical Properties of Narrow-Gap Low-Dimensional Structures ( St. Andrews, Scotland). Optical properties of narrow-gap low-dimensional structures.

New York: Plenum Press, © (OCoLC) Material Type: Conference publication: Document Type: Book: All Authors / Contributors. Get this from a library. Optical Properties of Narrow-Gap Low-Dimensional Structures.

[C M Sotomayor Torres; J C Portal; J C Maan; R A Stradling] -- This volume contains the Proceedings of the NATO Advanced Research Workshop on "Optical Properties of Narrow-Gap Low-Dimensional Structures", held from July 29th to August 1st,in St.

Andrews. Abstract. The paper reviews recent developments in the optical properties of narrow-gap semiconductors. The extension of optoelectronics to wavelengths beyond μm has required the development of novel device concepts and, unlike the situation with GaAs based systems, new materials technologies.

A case in question is the interest in replacing mercury cadmium telluride alloys for devices Cited by: Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties.

Physics and Properties of Narrow Gap Semiconductors offers clear descriptions of crystal growth, material science, and device physics of these unique materials. Topics covered include energy band structures, optical and transport properties, phonons, impurities and defects, recombination, and surface and interface properties.

the recent theoretical and experimental results in the study of the optical properties of low-dimensional semiconductor systems. This is a very fast evol ving field with many new material systems. The present book (Narrow Gap Semiconductors: (Vol.

I): Materials Physics and Fundamental Properties) and the forthcoming book (Narrow Gap Semiconductors (Vol. II): Devices and Low-Dimensional Physics) aim, in the two volumes, at characterizing a variety of narrow-gap semi.

This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme.

Optical Properties of Narrow-Gap Low-Dimensional Structures This volume contains the Proceedings of the NATO Advanced Research Workshop on Optical Properties of Narrow-Gap Low-Dimensional Structures, held from July 29th to August 1st,in St.

Andrews, Scotland, under the auspices of the NATO International Scientific Exchange Program. Pages: The NATO Special Programme Panel on Condensed Systems of Low Dimensionality began its work in at a time of considerable activity in the field.

The Panel has since funded many Advanced Research Workshops, Advanced Study Institutes, Cooperative Research Grants and Research Visits across theBrand: Springer US.

Editorial Narrow-Gap Semiconductors and Low-Dimensional Structures for Optoelectronic Applications FangyuYue, 1 SatyabrataJit, 2 andWeidaHu 3 Key Laboratory of Polar Materials and Devices of MOE, East China Normal University, Shanghai, China.

The beginning of this century brought graphene with its unique optical properties, partially arising from its intrinsic two-dimensional (2D) nature.

Perhaps the most interesting (and less-explored so far) spectral ranges in terahertz (THz) and mid-IR, where plasmon-polaritons are supported in graphene, represent an intriguing subject of.

Discover Book Depository's huge selection of R A Stradling books online. Free delivery worldwide on over 20 million titles. Optical Properties of Narrow-Gap Low-Dimensional Structures. Clivia M. Sotomayor-Torres. 18 Oct 01 Jul Hardback. unavailable.

Try AbeBooks. Optical Properties of Narrow-Gap Low-Dimensional Structures. This volume contains the Proceedings of the NATO Advanced Research Workshop on "e;Optical Properties of Narrow-Gap Low-Dimensional Structures"e;, held from July 29th to August 1st,in St.

Andrews, Scotland, under the auspices of the. The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_. Cd. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest.

It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on. This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors.

The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded 5/5(1).

electronic structures of both bulk and low-dimensional semiconductors. We have theoretically studied the spin-dependent Landau levels for electrons or holes in bulk GaAs system and AlInSb/InSb multiple quantum wells system.

We use the envelope function approximation for the electronic and magneto-optical properties of AlInSb/InSb superlattices. Title: Thin film growth techniques for low-dimensional structures / edited by R.F.C. Farrow [et al.]. Location: Phys-Sci QC//S9/N38/ Author: NATO Advanced Research Workshop on Optical Properties of.

Narrow-Gap Low-Dimensional Structures ( Saint Andrews, Fife) Title: Optical properties of narrow-gap low-dimensional structures /.The nanometer-scale manipulation of different exotic materials, therefore, allows for a new material design whose optical properties can be modified from the individual bulk material.

Thus, an artificially created new "lattice structure" can be formed in mixed semiconductor crystals, allowing for .Narrow gap welds were made in SA, Gr Class 2, Cr-1 Mo steel. This steel is used primarily in the fabrication of petrochemical reactor vessels. Two submerged arc narrow gap welding systems i.e., the Miller system, with a square wave AC power source, and the ESAB HNG system with a DC reverse polarity power source, were used for weld preparation.